http://www.aecouncil.com/Documents/AEC_Q006_Rev_A.pdf

AEC - Q006 - REV - A

QUALIFICATION REQUIREMENTS FOR COMPONENTS USING COPPER (Cu) WIRE INTERCONNECTIONS
使用铜 （Cu） 线互连的组件的资格要求

Acknowledgment

Any document involving a complex technology brings together experience and skills from many sources. The Automotive Electronics Council would especially like to recognize the following significant contributors to the revision of this document:
任何涉及复杂技术的文档都汇集了来自许多来源的经验和技能。汽车电子委员会特别感谢以下对本文件修订 做出重要贡献的人：

Cu Wire Requirements Sub-Committee Members:
铜线要求小组委员会成员：

Jeff Jarvis AMRDEC

James Molyneaux Analog Devices

Earl Fischer Autoliv

Bankim Patel Autoliv

Mark Sears Bose Corporation

Xin Miao Zhao Cirrus Logic

Hadi Mehrooz Continental Corporation

John Timms Continental Corporation
约翰·蒂姆斯大陆公司

Francis Classe Cypress (formerly with Spansion)
Francis Classe Cypress（原 Spansion 公司）

Ramon Aziz Delphi Corporation

Mark A. Kelly Delphi Corporation

Pamela Finer Diodes Incorporated (formerly with Pericom)
Pamela Finer Diodes Incorporated（前身为 Pericom）

Drew Hoffman Gentex

Jeff Darrow Globalfoundries

Steve Sibrel Harmon

Werner Kanert Infineon Technologies

Scott Daniels Infineon Technologies (formerly with International Rectifier)

Tim Haifley Intel (formerly with Altera)

Banjie Bautista ISSI

Robert Kinyanjui John Deere

Joe Lucia John Deere

Tom Lawler Lattice Semiconductor

Eric Honsowitz Lear Corporation

You get Lambaz Littelfuse

Warren Chen Macronix

Thomas VanDamme Magna Electronics (formerly with TRW Automotive)

Mike Buzinski Microchip

Bob Knoell [Q006 Team Leader] NXP Semiconductors

Zhongning Liang NXP Semiconductors

Andreas Pinkernelle NXP Semiconductors
Andreas Pinkernelle 恩智浦半导体

Rene Rongen NXP Semiconductors

Bruce Hood NXP Semiconductors (formerly with Freescale)
Bruce Hood NXP Semiconductors（前身为 Freescale）

Stephen Lee NXP Semiconductors (formerly with Freescale)
Stephen Lee 恩智浦半导体（前身为飞思卡尔）

Nick Lycoudes NXP Semiconductors (formerly with Freescale)
Nick Lycoudes NXP Semiconductors（原 Freescale）

Peter Turlo ON Semiconductor
Peter Turlo 安森美半导体

Qualcomm

Eric Bedes Renesas Electronics

Bassel Atala STMicroelectronics

Larry Ting Texas Instruments
Larry Ting 德州仪器

James Williams Texas Instruments

Arthur Chiang Vishay

Kun-Fu Chuang Winbond

Crime Semmaud Xilinx

Larry Dudley ZF/TRW Automotive

NOTICE

AEC documents contain material that has been prepared, reviewed, and approved through the AEC Technical Committee.
AEC 文档包含通过 AEC 技术委员会准备、审查和批准的材料。

AEC documents are designed to serve the automotive electronics industry through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than AEC members, whether the standard is to be used either domestically or internationally.
AEC 文件旨在通过消除制造商和购买者之间的误解，促进产品的互换和改进，并帮助购买者以最小的延迟选择和获得适合 AEC 成员以外的人使用的产品，无论该标准是在国内还是国际上使用，从而为汽车电子行业服务。

AEC documents are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such action AEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the AEC documents. The information included in AEC documents represents a sound approach to product specification and application, principally from the automotive electronics system manufacturer viewpoint. No claims to be in Conformance with this document shall be made unless all requirements stated in the document are met.
采用 AEC 文档时，不考虑其采用是否涉及专利或文章、材料或流程。通过此类行动，AEC 不对任何专利所有者承担任何责任，也不对采用 AEC 文档的各方承担任何义务。AEC 文档中包含的信息代表了产品规格和应用的合理方法，主要是从汽车电子系统制造商的角度来看。除非满足文件中规定的所有要求，否则不得声称符合本文件。

Inquiries, comments, and suggestions relative to the content of this AEC document should be addressed to the AEC Technical Committee on the link http://www.aecouncil.com.
有关本 AEC 文档内容的查询、意见和建议，应通过链接 http://www.aecouncil.com 向 AEC 技术委员会提出。

Published by the Automotive Electronics Council.
由汽车电子委员会出版。

This document may be downloaded free of charge, however AEC retains the copyright on this material. By downloading this file, the individual agrees not to charge for or resell the resulting material.
本文档可免费下载，但 AEC 保留此材料的版权。下载此文件，即表示个人同意不收取费用或转售所得资料。

Printed in the U.S.A. All rights reserved
美国印刷版权所有

Copyright © 2016 by the Automotive Electronics Council. This document may be freely reprinted with this copyright notice. This document cannot be changed without approval from the AEC Component Technical Committee
汽车电子委员会版权所有 ©2016 。本文档可以自由转载，并附有此版权声明。未经 AEC 组件技术委员会批准，不得更改本文档.

QUALIFICATION REQUIREMENTS FOR COMPONENTS USING COPPER (Cu) WIRE INTERCONNECTIONS
使用铜 （Cu） 线互连的组件的资格要求

Text enhancements and differences made since the release of this document are shown as underlined areas.
自本文档发布以来进行的文本增强和差异显示为带下划线的区域。

1. SCOPE

   
   

   This document contains a set of tests and defines the minimum requirements for qualification of copper (Cu) wire interconnections for components to be used in any automotive electronics application. While the set of tests highlighted here are replicated in AEC-Q100/Q101, this document details any different test conditions and/or durations plus the activity around these tests that are unique requirements for ensuring Cu wire reliability. Use of this document does not relieve the supplier of their responsibility to meet their own company's internal qualification program. In this document, "user" is defined as all customers using a component qualified per this specification. The user is responsible to confirm and validate all qualification data that substantiates conformance to this document.
   本文档包含一组测试，并定义了任何汽车电子应用中使用的组件的铜 （Cu） 线互连资格的最低要求。虽然此处重点介绍的一组测试在 AEC-Q100/Q101 中进行了复制，但本文档详细介绍了任何不同的测试条件和/或持续时间，以及围绕这些测试的活动，这些测试是确保铜线可靠性的独特要求。使用本文件并不能免除供应商满足其公司内部资格认证计划的责任。在本文档中，“用户”定义为使用根据本规范限定的组件的所有客户。用户负责确认和验证所有证明符合本文档的资格认证数据。

   
   

   If a supplier has already qualified Cu wire and is in production with no Cu wire related issues, the supplier does not have to requalify those approved components again per this document.
   如果供应商已经对铜丝进行了认证，并且在生产中没有铜丝相关问题，则供应商不必根据本文件再次重新认证这些已批准的组件。

   
   

   1. Purpose

      
      

      The purpose of this specification is to determine that a component is capable of passing the specified stress tests and thus can be expected to give a certain level of quality/reliability in the application.
      本规范的目的是确定组件能够通过指定的应力测试，因此可以预期在应用程序中提供一定程度的质量/可靠性。

      
      

   2. Reference Documents 参考文件

      
      

      Current revision of the referenced documents will be in effect at the date of agreement to the qualification plan. Subsequent qualification plans will automatically use updated revisions of these referenced documents.
      参考文件的当前修订版将在同意资格认证计划之日生效。后续的资格认证计划将自动使用这些参考文档的更新修订版。

      
      

      1. Automotive

         
         

         AEC-Q100 Failure Mechanism Based Stress Test Qualification for Integrated Circuits
         AEC-Q100 基于故障机制的集成电路应力测试鉴定

         AEC-Q101 Failure Mechanism Based Stress Test Qualification for Discrete Semiconductors in Automotive Applications
         AEC-Q101 基于故障机制的汽车应用中分立半导体应力测试鉴定

         
         

      2. JEDEC

         
         

         JESD22 Reliability Test Methods JESD22-A104 Temperature Cycling (TC)
         JESD22 可靠性测试方法 JESD22-A104 温度循环 （TC）

         JESD22-A110 Highly Accelerated Stress Test (HAST)
         JESD22-A110 高加速应力测试 （HAST）

         JESD22-A101 Temperature Humidity Bias (THB) / High Humidity High Temperature Reverse Bias (H3TRB)
         JESD22-A101 温度湿度偏置 （THB） / 高湿度高温反向偏置 （H3TRB）

         JESD22-A105 Power Temperature Cycle (PTC)
         JESD22-A105 功率温度循环 （PTC）

         JESD22-A103 High Temperature Storage Life (HTSL) / High Temperature Gate Bias (HTGB) J-STD-035 Acoustic Microscopy for Non-Hermetic Encapsulated Electronic Components
         JESD22-A103 高温存储寿命 （HTSL） / 高温栅极偏置 （HTGB）J-STD-035 用于非密封封装电子元件的声学显微镜

         J-STD-020 Moisture/Reflow Sensitivity Classification for Nonhermetic Surface Mount Devices

         
         

      3. Military

         
         

         MIL-STD-750, Method 1037 Intermittent Operation Life (IOL)

         MIL-STD-750, Method 1038 (condition A) High Temperature Reverse Bias (HTRB)
         MIL-STD-750，方法 1038（条件 A）高温反向偏置 （HTRB）

         
         

2. EQUIPMENT

   
   

   Not applicable (see referenced documents)
   不适用（请参阅参考文件）

   
   

3. DATA SUBMISSION 数据提交

   
   

   1. Certificate of Design and Construction
      设计与施工证书

      
      

      For qualification of components with Cu wire, a Certificate of Design and Construction per AEC- Q100/Q101 is required to determine whether available generic data can apply to the part in question for one or more of the required tests in this document.
      对于铜丝元件的鉴定，需要根据 AEC-Q100/Q101 的设计和构造证书，以确定可用的通用数据是否可以适用于本文件中的一项或多项要求的测试的相关部件。

      
      

      If applicable, supplier must document the definition of Cu wire product or technology family. This document should explain the selection of family (worst-case) test vehicle(s). In the list in Section 7.1, critical product, construction and material items for defining Cu wire product or technology families are given.
      如果适用，供应商必须记录铜丝产品或技术系列的定义。本文件应说明系列（最坏情况）测试车辆的选择。在第 7.1 节的列表中，给出了定义铜丝产品或技术系列的关键产品、结构和材料项目。

      
      

      The relevant items in the Certificate of Design and Construction are highlighted in Section 7.1 for determination of what data is considered acceptable generically.
      第 7.1 节突出显示了设计和施工证书中的相关项目，以确定哪些数据通常被认为是可接受的。

      
      

   2. Test Results 测试结果

      
      

      The following data is to be submitted to the user for approval on request:
      根据要求，将以下数据提交给用户以供批准：

      
      

      • Cu wire stress test qualification results
        铜丝应力测试鉴定结果

      • Wire pull/ball shear – mean, min, max, standard deviation

      • CSAM images before/after stressing
        应力前/后 CSAM 图像

      • Electrical/ATE functional/parametric test results before/after stress tests
        应力测试之前/之后的电气/ATE 功能/参数测试结果

      • Cross-sections of ball/wedge bonds (as needed per Section 5)
        球/楔焊的横截面（根据第 5 节的需要）

      
      

4. QUALIFICATION TESTS 资格测试

   
   

   The required set of qualification stresses, test conditions and test durations are shown in the following sections, with an enhanced qualification flow described in Tables 3a/3b. Other tests not mentioned in Tables 3a/3b shall be performed as required per AEC-Q100/AEC-Q101.
   以下各节显示了所需的鉴定应力、测试条件和测试持续时间集，表3a/3b 中描述了增强的鉴定流程。表 3a/3b 中未提及的其他测试应按照 AEC-Q100/AEC-Q101 的要求进行。

   
   

   Qualification of Cu wire components to standard AEC-Q100/Q101 requirements for temperature cycling can be conducted if board level stress test (Section 4.5) was performed with no issues or fails observed. Otherwise, the supplier must perform the enhanced qualification flow described in Tables 3a/3b on a family/technology specific component at a minimum.
   如果执行了板级应力测试（第 4.5 节），并且没有观察到任何问题或故障，则可以根据标准 AEC-Q100/Q101 温度循环要求对铜线元件进行鉴定。否则，供应商必须至少对系列/技术特定组件执行表3a/3b 中描述的增强认证流程。

   
   

   If a supplier has already qualified Cu wire and is in production with no Cu wire related issues, the supplier does not have to requalify those approved components again per this document.
   如果供应商已经对铜丝进行了认证，并且在生产中没有铜丝相关问题，则供应商不必根据本文件再次重新认证这些已批准的组件。

   
   

   1. Temperature Cycling (TC)

      
      

      This test highlights the differences in the coefficient of thermal expansion of package materials with Cu along with the increased hardness of Cu with respect to gold (Au).
      该测试突出了封装材料与 Cu 的热膨胀系数的差异，以及 Cu 相对于金 （Au） 的硬度增加。

      
      

      Perform per the test requirements in AEC-Q100/Q101. The only exception is for Q100 Grade 0 as shown below:
      按照 AEC-Q100/Q101 中的测试 要求执行。唯一的例外是 Q100 0 级，如下所示：

      
      

      Grade 0: -55ºC to +150ºC for 1500 cycles or equivalent for step 6 (Stress 1X) of Table 3 and 3000 cycles for step 11 (Stress 2X) of Table 3.
      0 级：-55ºC 至 +150ºC，1500 次循环或表第 3 步（应力 1X）和表 3 第 11 步（应力 2X）的 3000 次循环。

      
      

   2. Biased Humidity (HAST/THB/H3TRB)

      
      

      This test can exacerbate corrosion along the Cu/bond pad intermetallic compound (IMC) interfaces.
      该测试会加剧铜/焊盘金属间化合物 （IMC） 界面的腐蚀。

      
      

      Perform per the test requirements in AEC-Q100/Q101.

      
      

   3. Power Temperature Cycle (PTC) / Intermittent Operation Life (IOL)
      功率温度循环 （PTC） / 间歇运行寿命 （IOL）

      
      

      This test can accelerate wearout by the combination of current/voltage and temperature.
      该测试可以通过电流/电压和温度的组合来加速磨损。

      
      

      Perform per the test requirements in AEC-Q100/Q101 if applicable to the part type being tested (e.g., PowerMOS).
      如果适用于被测器件类型（例如 PowerMOS），请按照 AEC-Q100/Q101 中的测试 要求执行。

      
      

   4. High Temperature Storage Life (HTSL) / High Temperature Gate Bias (HTGB) / High Temperature Reverse Bias (HTRB)

      
      

      This test can accelerate IMC growth along the Cu/Aluminum (Al) interface to yield an open bond failure. It can also degrade the mechanical performance of the stitch (wedge/second bond) bond. This is especially important for high temperature applications.
      该测试可以加速 IMC 沿铜/铝 （Al） 界面的生长，从而产生开路键合失败。它还会降低针迹（楔形/二次粘合） 粘合的机械性能。这对于高温应用尤其重要。

      
      

      Perform per the test requirements in AEC-Q100/Q101.

      
      

   5. Board Level Stress Test

      
      

      Performance of this board-level temperature cycling test along with the test conditions, sample sizes and bill of materials to be used is to be agreed to between the user and supplier and justified by data.
      该板级温度循环测试的性能以及测试条件、样品量和要使用的物料清单应由用户和供应商商定，并有数据证明。

      
      

5. ANALYTICAL TESTS 分析测试

   
   

   1. Delamination/CSAM

      
      

      Delamination of the mold compound over the Cu ball or stitch bond could lead to joint fatigue failure at either weld joint. The delamination criteria for various stages of qualification testing are shown in Table 1. Delamination of the mold compound at a wire bond location is an indicator of risk but may not be a cause of failure within the useful life portion of the device. For example, there are many small discrete devices that may exhibit delamination at the stitch bond location at various points and in changing magnitudes in the test sequence or useful life but exhibit no reliability concerns in the field.
      模塑料在铜球或针合上的分层都可能导致任一焊缝处的接头疲劳失效。表 1 显示了鉴定测试各个阶段的分层标准。模塑料在引线键合位置的分层是风险的指标，但在器件的使用寿命部分可能不是失效的原因。例如，有许多小型分立器件可能在不同点的缝合位置出现分层，并且在测试序列或使用寿命中以不断变化的幅度表现出分层，但在现场没有表现出可靠性问题。

      
      

      Table 1: Delamination Criteria

      
      

      
      

      Read Point Mold Compound Delamination Acceptance Criteria
      Read Point 模塑化合物分层验收标准

      
      

      Electrical 电气

      
      

      No delamination at first (ball) or second
      第一层（球）或第二层无分层

      T0 (stitch/wedge) bonds unless otherwise agreed between supplier and user. (1)
      T0（针迹/楔形）粘合，除非供应商和用户另有约定。 1）

      
      

      All components passing production test
      所有组件均通过生产测试

      
      

      
      

      Qualification Requirements
      资格要求

      
      

      Post MSL PC

      
      

      1X for AEC Q100

      grade X or AEC Q101

      No delamination at first (ball) or second (stitch/wedge) bonds unless otherwise agreed between supplier and user. (1)
      除非供应商和用户另有约定，否则在第一次（球）或第二次（缝合/楔形）粘合处没有分层。1）

      
      

      No delamination at first (ball) bond. If any second (stitch/wedge) bond delamination found – no heel cracks.(1)

      
      

      All components passing production test
      所有组件均通过生产测试

      
      

      All components passing production test
      所有组件均通过生产测试

      
      

      2X for AEC Q100

      grade X or AEC Q101 (TC

      included if no BLR performed)
      如果未执行 BLR，则包括

      
      

      Evaluate the severity of any bond delamination found per Sections 5.2 and 5.3. (2)
      评估根据第 5.2 节和第 5.3 节发现的任何键合分层的严重程度。2）

      
      

      All components passing production test (3
      所有组件均通过生产测试（3)

      
      

      Minimum CSAM sample size: EITHER the same 11 components per lot through each readpoint (preferable) OR 22 random components per lot at each readpoint.
      最小 CSAM 样品量：每个读取点每个批次具有相同的 11 个组分（首选）或每个读取点每个批次 22 个随机组分。

      
      

      

      Notes: 笔记：

      
      

      1. Agreement between the supplier and user would be achieved via the exchange of data that demonstrates that the form of delamination seen is not an issue for this part based on supporting data (field, monitor, in-process, etc.).
         供应商和用户之间的协议将通过数据交换来实现，这些数据表明，根据支持数据（现场、监控、过程中等），所看到的分层形式对于该部件来说不是问题。

      2. Method of evaluation to be determined by the user and supplier.
         评估方法由用户和供应商决定。

      3. At 2X TC read point, passing production test means zero systematic Cu wire related issues.
         在 2X TC 读取点时，通过生产测试意味着零系统性铜丝相关问题。

      For example, if a failure was found to be related to solder ball or substrate, that is not considered a valid Cu wire failure.
      例如，如果发现故障与焊球或基板有关，则不被视为有效的铜丝故障。

      
      

   2. Wire Bond Integrity

      
      

      The tests described below and where they are performed are a good gauge of the bond strength and weld formation of the ball and stitch bonds. They are done to demonstrate adequate process control with acceptable bond integrity. The location of the hook for bond pull should be over the contact of interest (i.e., over the ball and over the stitch/wedge).
      下面描述的测试以及执行这些测试的位置是衡量球和针合结合的粘合强度和焊缝形成的良好指标。这样做是为了证明适当的过程控制和可接受的粘合完整性。用于粘合拉力的钩子的位置应在感兴趣的接触面上（即，在球上和针迹/楔子上）。

      
      

      • Ball shear – ball bond area versus shear force (pre-packaged)

      • Ball and Stitch/Wedge bond wire pull (pre-packaged)
        球形和针迹/楔形键合线拉头（预包装）

      • Perform wire pull/ ball shear on first bond and wire pull for stitch/wedge bond (post packaged)
        在第一次键合时执行拉丝/球剪，并对针迹/楔形 键合进行拉丝（后包装）

      • Pad cratering test (pre-packaged)
        焊盘缩孔测试（预包装）

      
      

      Wire pull / ball shear is performed after stress testing and decapsulation. A recommended process flow is described below:
      拉丝/球剪在应力测试和解封装后进行。推荐的工艺流程如下：

      
      

      1. Select components per the sample size specified in AEC-Q100/Q101 for wire pull and shear.
         根据 AEC-Q100/Q101 中指定的样本大小选择用于拉线和剪切的元件。

         Selecting worst-case components based on CSAM after 2X stress is desirable.
         在2 倍应力 后基于 CSAM 选择最坏情况的零部件是可取的。

         
         

      2. Carefully decapsulate these components so as to not damage or adversely affect the wire bonds but enough to be able to reliably conduct wire pulls and/or bond shears.
         小心地解封这些组件，以免损坏或对引线键合产生不利影响，但足以可靠地进行拉线和/或键合剪。

         
         

      3. The wire pull hook should be situated as close as possible over the stitch/wedge bond for stitch/wedge bond pull and over the ball for ball bond pull. Stitch/wedge bond pull force results after stress testing may not be a reliable gauge of bond quality, as the act of pulling a stitch/wedge might not be repeatable and/or reproducible.
         拉丝钩应尽可能靠近 针迹/楔形粘合物的上方，以便进行针迹/楔 形粘合，以及球形粘合力的球。应力测试后的针迹/楔形 粘合力拉力结果可能不是衡量粘合质量的可靠指标，因为拉动针迹/楔形的动作可能无法重复和/或再现。

         
         

         

      4. Compare these results with production or qualification data (i.e., before mold via WBP/WBS or after decap) to assess the level of degradation in the distribution of the data. If there are positively biased wires required in the test, ensure that they are included in this analysis, as they are thought to be more susceptible to corrosion.
         将这些结果与生产或鉴定数据（即通过 WBP/WBS 发霉前或开封后）进行比较，以评估 数据分布的降解程度。如果测试中需要正偏置导线，请确保将它们包括在此分析中，因为它们被认为更容易受到腐蚀。

         
         

      5. In conjunction with pull/shear after decapsulation, a thorough inspection of the stitch/wedge bonds should take place to look for heel cracks or precursors for failure.
         结合开封后的拉/剪，应对缝合/楔形粘合进行彻底检查，以寻找后跟裂纹或失效的前兆。

      
      

      For temperature cycling, pulls and shears at corner locations of the die/package are preferable. For moisture stressing, selecting random balls/stitches is acceptable (uniform moisture penetration) but ensure that both biased and unbiased pins are selected. Determination of which wires per device undergo ball shear, ball pull or stitch/wedge pull is left to the supplier to determine as long as the intent of inspecting all types of bonds is adequately addressed.
      对于温度循环，最好在芯片/封装的拐角位置进行拉动和剪切。对于水分应力，选择随机球/针是可以接受的（均匀的水分渗透），但要确保同时选择偏置和无偏置的销钉。只要充分满足检查所有类型键合的目的，就可以确定每个设备的哪些电线会经历球剪、球拉或缝合/楔形 拉。

      
      

   3. Cross-Sectioning Inspection
      横截面检查

      
      

      For initial supplier qualification of a new die/package (interaction) family/technology, selecting worst-case components based on CSAM after 2X stress is desirable. The sample sizes and test conditions are specified in the overall process qualification flow shown in Tables 3a/3b.
      对于新芯片/封装（交互）系列/技术的初始供应商资格认证，在 2 倍应力后基于 CSAM 选择最坏情况 的组件 是可取的。样品量和测试 条件在表3a/3b 所示的整个工艺确认流程中指定。

      
      

      Areas of examination:

      
      

      • Ball bond area

        • Amount and distribution of intermetallic - an alternative planar analysis method to evaluate ball bond IMC formation is also acceptable.
          金属间化合物的数量和分布 - 一种用于评估球键合 IMC 形成的替代平面分析方法也是可以接受的。

        • Crack initiation/propagation

        • Corrosion after 1X stress
          1X应力后的腐蚀

          
          

      • Stitch/Wedge bond area

        • Amount of contact 接触量

        • Wire angle to stitch/wedge
          线材角度到针迹/楔形

        • Crack initiation/propagation

        • Corrosion after 1Xstress
          1X应力后的腐蚀 

        • Intermetallics formed in the bond area
          在键合区域形成金属间化合物

      
      

6. COMPONENT CHANGES 组件更改

   
   

   1. Qualification Test Requirements for Cu Wire Changes
      铜丝变更的鉴定测试要求

      
      

      The requirements for qualification of changes to already qualified and released components can be found in AEC-Q100/Q101. An agreement has to be arrived at between the user and supplier as to whether the change should be qualified to Q100/Q101 or Q006 requirements for the applicable test to be considered.
      AEC-Q100/Q101 中提供了对已认证和已发布组件 的更改的认证要求。用户和供应商之间必须就更改是否应符合 Q100/Q101 或 Q006 要求以考虑适用测试达成协议。

      
      

      In cases where wire is changing to copper (including coated copper wire), relevant stress tests and physical analysis steps must be performed per Q006 Table 3a/3b conditions, unless internal and external data for already-qualified Cu wire parts is provided with technical justification to support the equivalent robustness of the material and design changes and is agreeable to the customer.
      在电线变为铜（包括涂层铜线）的情况下，必须根据 Q006 表 3a/3b 条件执行相关的应力测试和物理分析步骤，除非为已经合格的铜线零件的内部和外部数据提供了技术理由，以支持材料和设计更改的等效稳健性，并且客户同意。

      
      

7. QUALIFICATION REQUIREMENTS FOR Cu WIRE COMPONENTS
   铜丝组件的资格要求

   
   

   The sections below describe the individual steps required in a qualification flow for Cu wire components and the sample sizes required for each stress test.
   以下各节 描述了 铜丝元件鉴定流程中所需的各个步骤以及每个应力测试所需的样本量。

   
   

   1. Family Data Usage 家庭数据使用

      
      

      The qualification can be performed on a technology basis, defined as sharing the same characteristics described below. Technology family is qualified using the technology driver (or lead product) most representative of the technology family. Product family is the subset of (functional specific) parts (or follow-on parts) under the technology driver part. Passage of the technology family allows subsequent components in the product family(ies) used for the technology qualification to then be qualified by association. See Table 2 for the qualification requirements per different cases of the technology family criteria.
      该认证可以基于技术进行，定义为具有如下所述的相同特性。技术系列使用最能代表技术系列的技术驱动因素（或主产品）进行鉴定。产品系列是技术驱动部分下的（功能特定）部件（或后续部件）的子集。 技术系列的通过允许用于技术认证的 产品系列中的后续组件随后 通过关联进行认证。有关技术系列标准中不同情况的资格要求，请参见表 2。

      
      

      Use of family generic data for new designs into the family requires a consideration of a combination of family attributes. This section provides a list of relevant items for consideration. In this case for use of Cu wire, a family consists of 1) silicon die related attributes, 2) package related attributes and 3) assembly factory related attributes. Table 2 provides an overview of those attributes that characterize a Technology Family.
      将族通用数据用于族中的新设计时，需要考虑族属性的组合。本节提供了供考虑的相关项目列表。在这种情况下，对于使用 Cu 线，一个系列包括 1） 硅晶片相关属性，2） 封装相关属性和 3） 组装工厂相关属性。表 2 概述了构成 Technology Family 的那些属性。

      
      

      Table 2: Technology Family Criteria
      表 2：技术系列标准

      
      

      The qualification requirements per different cases of the technology family criteria.
      技术系列标准中不同情况的资格要求。

      
      

      

      

      

      

      

      

      

      

      

      

      

      

      

      

      

      

      

      

      

      

      

      

      Note that in each case only the difference(s) is highlighted and all other attributes are the same unless specified otherwise.
      请注意，在每种情况下，除非另有说明，否则仅突出显示差异，所有其他属性都相同。

      
      

      Case	Silicon die related attributes 硅晶片相关属性	Package related attributes Package 相关属性	Assembly site    location related attributes 程序集站点  位置相关属性	Requirements in    addition to Q100/Q101   Q100/Q101 之外 的要求
      1	different	different	different	Q006 (Tables 3a/3b), 3 lots
      2a	different bond pad    base/layered materials    (e.g., Al vs. plated Al vs. With)	same	same	Q006 (Tables 3a/3b), 3 lots
      2b	new component has a   die diagonal size of    >115% of the technology qual vehicle 新部件的 模具对角线尺寸为  >115% 的技术合格 车辆	same	same	Q006 (Tables 3a/3b for TC), 3 lots Q006 （TC 表 3a/3b），3 手
      2c	different dielectric composition and   thickness under the bond pad 焊盘下不同的  介电 成分和 厚度	same	same	Q006 (Tables 3a/3b for TC) 3 lots Q006 （TC 表 3a/3b） 3 手
      3a	same	different mold compound materials 不同的模塑复合材料	same	Q006 (Tables 3a/3b), 3 lots
      3b	same	different bond wire    materials (eg, Cu bars vs. coated Cu)	same	Q006 (Tables 3a/3b), 3 lots
      3c	same	different lead frame/   substrate material surface at stitch (e.g., NiPdAu vs.   Cu vs. Alloy42 vs Ag strike) 针迹时 不同的引线框架/ 衬底材料表面 （例如，NiPdAu vs.   Cu vs. Alloy42 vs Ag 压印）	same	Q006 (Tables 3a/3b), 3 lots
      3d	same	different package types (e.g., QFP vs. SOIC) 不同的封装类型（例如，QFP 与 SOIC）	same	Q006 (Tables 3a/3b), 3 lots
      4a	same	same	Different assembly site locations 不同的装配现场位置	Q006 (Tables 3a/3b), 3 lots
      5	new component has a die diagonal size of    <115% of the technology qual vehicle 新部件的 模具对角线尺寸为  <115% 的技术合格 车辆	same	same	1 lot per Q100/Q101    requirements (need generic or part-specific data up to item #10 in Tables 3a/3b) 每个 Q100/Q101  要求 1 批次（需要通用或 部件特定数据 ，直至表 3a/3b 中 项目 #10）

      
      

   2. Integrated Circuit Qualification Requirements
      集成电路资格要求

      
      

      Table 3a below describes the test requirements and sequence for Cu wire qualification of integrated circuit devices in addition to or replacement of the normal qualification requirements per AEC-Q100. The sample sizes in the table define the number of lots times the number of samples per lot.
      下面的表 3a 描述了集成电路器件铜线鉴定的测试要求和顺序，以及 AEC-Q100 的正常鉴定要求或替代。表中的样本量定义了手数乘以每批次的样本数。

      
      

      

      Table 3a: Integrated Circuit Qualification Test Requirements based on AEC-Q100
      表3a： 基于 AEC-Q100 的集成电路鉴定测试要求

      
      

      Sequence   # 序列 #	Stress Test Qualification Step 压力测试鉴定步骤	TC	HAST/THB	PTC	HTSL
      1	Initial sampling	Sample sizes as required 根据要求提供样品量
      2	CSAM @ T0 (1)	Sample sizes as required 根据要求提供样品量
      3	Preconditioning to MSLx MSLx 的预处理	3x77	3x77	1x45	---
      4	CSAM after PC (1) PC 1 之后的 CSAM）	3x22	3x22	1x22	---
      5	ATE Test ATE 测试	3x77	3x77	1x45	3x45
      6	Stress 1X	3x77	3x77	1x45	3x45
      7	ATE Test ATE 测试	3x77	3x77	1x45	3x45
      8	CSAM post-1X stress (1,5)	3x22	3x22 (6)	---	---
      9a	Ball + Stitch/Wedge pull	3 x3  (4,7)	3 x3  (4,7)	---	---
      9b	Ball shear	3x3 (4,7)	3x3 (4,7)	---	---
      10	Cross-section 横截面	3x1 (7)	3x1 (7)	---	3x1
      11	Stress 2X	3x70 (2)	3x70	1x45	3x44
      12	ATE Test ATE 测试	3x70 (2,3)	3x70 (3)	1x45 (3)	3x44 (3)
      13	CSAM post-2X stress (1)	3x22 (2)	3x22	---	---
      14a	Ball + Stitch/Wedgepull	3x2 (2,4)	3x2 (4)	---	---
      14b	Ball shear	3x2 (2,4)	3x2 (4)	---	---
      15	Cross-section 横截面	3x1 (2)	3x1	---	3x1

      
      

      

      

      

      

      

      

      

      

      Notes: 笔记：

      1. Either 11 marked or 22 random parts per lot per Table 1 CSAM sample size criteria.
         根据表 1 CSAM 样本量标准，每批次 11 个标记或 22 个随机部件。

      2. Performed only if board level reliability testing is NOT being performed
         仅在未执行板级可靠性测试时执行.

      3. Any failures beyond 1X must directly relate to the Cu wire bonding system for them to count as a legitimate failure requiring further evaluation (i.e., the projected lifetime of failure, effect of fail mode on product lifetime, corrective/preventive action). The method of approval is determined between the user and supplier.
         任何超过 1X 的故障都必须与铜线键合系统直接相关，才能算作需要进一步评估的合法故障（即，预计的故障寿命、故障模式对产品寿命的影响、纠正/预防措施）。批准方法由用户和供应商共同决定。

      4. Pull/shear as many as is possible per the number of wires per device to be qualified up to a maximum of 30 wires/balls from the total sample size specified.
         根据每个设备要鉴定的导线数量，尽可能多地拉/剪，从指定的总样品量中最多拉取 30 根导线/球。

      5. CSAM may be waived for parts in cases where parts need to be mounted on test boards to perform the stress and where the die are mounted upside down. This arrangement makes it impossible to image the interfaces of concern without dismounting them from the test board and remounting them after CSAM is performed.
         如果零件需要安装在测试板上以施加应力，并且芯片倒置安装，则可以免除 CSAM。这种安排使得如果不从测试板上卸载相关接口并在执行 CSAM 后重新安装它们，就无法对相关接口进行映像。

      6. Skip this step if you are performing to 2X. Include this step if yo u are performing per case 5 of Table 2.
         如果要执行 2X ，请跳过此步骤。如果您正在执行表 5 中的第 2 个案例，请包括此步骤。

      7. If agreed, sample for this test can be set aside unless an issue is found at 2X.
         如果达成一致，除非在 2X 发现问题，否则可以搁置此测试的样本。

      
      

   3. Discrete Device Qualification Requirements
      分立器件认证要求

Table 3b below describes the test requirements and sequence for Cu wire qualification of discrete devices in addition to or replacement of the normal qualification requirements per AEC-Q101. The sample sizes in the table define the number of lots times the number of samples per lot. See Q101 for the applicability of each test per device function (i.e., LEDs and zeners do not require HTRB/HTGB).
下面的表 3b 描述了分立器件铜线鉴定的测试要求和顺序，以及 AEC-Q101 的正常鉴定要求或替代标准。表中的样本量定义了批次数乘以每批次的样本数。请参阅 Q101 了解每种设备功能的每项测试的适用性（即 LED 和齐纳二极管不需要 HTRB/HTGB）。

Table 3b: Discrete Qualification Test Requirements based on AEC-Q101
表3b：基于 AEC-Q101 的分立式鉴定测试要求

Sequence   # 序列 #	Stress Test Qualification Step 压力测试鉴定步骤	TC	HAST/H3TRB	IOL	HTRB/HTGB   (8)
1	Initial sampling	Sample sizes as required 根据要求提供样品量
2	CSAM @ T0 (1)	Sample sizes as required 根据要求提供样品量
3	Preconditioning to MSLx MSLx 的预处理	3x77	3x77	3x77	---
4	CSAM after PC (1) PC 1 之后的 CSAM）	3x22	3x22	3x22	---
5	ATE Test ATE 测试	3x77	3x77	3x77	3x77
6	Stress 1X	3x77	3x77	3x77	3x77
7	ATE Test ATE 测试	3x77	3x77	3x77	3x77
8	CSAM post-1X stress (1,5)	3x22	3x22 (6)
9a	Ball + Stitch/Wedge pull	3x3 (4,7)	3x3 (4,7)	---	---
9b	Ball shear	3x3 (4,7)	3x3 (4,7)	---	---
10	Cross-section 横截面	3x1 (7)	3x1 (7)	---	3x1
11	Stress 2X	3x70 (2)	3x70	3x77	3x76
12	ATE Test ATE 测试	3x70 (2,3)	3x70 (3)	3x77 (3)	3x76 (3)
13	CSAM post-2X stress (1)	3x22 (2)	3x22
14a	Ball + Stitch/Wedgepull	3x2 (2,4)	3x2 (4)	---	---
14b	Ball shear	3x2(2,4)	3x2(4)	---	---
15	Cross-section 横截面	3x1 (2)	3x1	---	3x1

Notes: 笔记：

1. Either 11 marked or 22 random parts per lot per Table 1 CSAM sample size criteria.
   根据表 1 CSAM 样本量标准，每批次 11 个标记或 22 个随机部件。

2. Performed only if board level reliability testing is NOT being performed.
   仅在未执行板级可靠性测试时执行。

3. Any failures beyond 1X must directly relate to the Cu wire bonding system for them to count as a legitimate failure requiring further evaluation (i.e., the projected lifetime of failure, effect of fail mode on product lifetime, corrective/preventive action). The method of approval is determined between the user and supplier.
   任何超过 1X 的故障都必须与铜线键合系统直接相关，才能算作需要进一步评估的合法故障（即，预计的故障寿命、故障模式对产品寿命的影响、纠正/预防措施）。批准方法由用户和供应商共同决定。

4. Pull/shear as many as is possible per the number of wires per device to be qualified up to a maximum of 30 wires/balls from the total sample size specified.
   根据每个设备要鉴定的导线数量，尽可能多地拉/剪，从指定的总样品量中最多拉取 30 根导线/球。

5. CSAM may be waived for parts where the die are mounted upside down, making it impossible to image the interfaces of concern with out dismounting them from the test board and remounting them after CSAM is performed.
   对于芯片倒置安装的部件，可以免除 CSAM，因此如果不从测试板上拆卸并在执行 CSAM 后重新安装它们，就无法对相关接口进行成像。

6. Skip this step if you are performing to 2X. Include this step if you are performing per case 5 of Table 2.
   如果要执行 2X ，请跳过此步骤。如果您根据表 2 中的案例 5 执行，请包括此步骤。

7. If agreed, sample for this test can be set aside unless an issue is found at 2X.
   如果达成一致，除非在 2X 发现问题，否则可以搁置此测试的样本。

8. This test can be performed unbiased to more resemble an HTSL-type test.
   该测试可以无偏倚地进行，以更类似于 HTSL 类型的测试。

APPENDIX 1: Cu Wire Process and Technology Characterization Guideline
附录 1：铜丝工艺和技术特性指南

This appendix is meant to be used as a guideline for users of components assembled using Cu wire for the internal interconnects. This guideline is a broad outline of generic items and issues suppliers should address to ensure a reliable Cu wire process in production.
本附录旨在用作使用铜丝组装用于内部互连的组件用户的指南。本指南概述了供应商应解决的通用项目和问题，以确保生产中可靠的铜丝工艺。

This guideline is meant to illustrate the technical items that need discussion between supplier and user to determine the level of competence in the supplier’s development process for Cu wire production. This discussion can involve data from design of experiments, stress tests, historical data, models, etc.
本指南旨在说明供应商和用户之间需要讨论的技术项目，以确定供应商在铜丝生产开发过程中的能力水平。此讨论可能涉及来自实验设计、压力测试、历史数据、模型等的数据。

1. Failure Mechanisms Related to Copper Wire and Causes/Risk Factors:
   与铜线相关的失效机制和原因/风险因素：

   
   

   • Chipout under ball bond (AEC Q100-001)

     • The pad and underlying structures have higher risk of damage/cracking due to the extra ball bonding force required for Cu wire
       由于铜丝需要额外的球键合力，焊盘和底层结构具有更高的损坏/开裂风险

     • Bonding over layered active area circuitry
       多层有源区域电路上的键合

     • Thin passivation layer under bond pad

   • Corrosion along Cu/Al IMC interface

     • Trace contaminants/additives in mold compound in presence of moisture
       模塑料中含有微量污染物/添加剂

   • Insufficient Cu/Al IMC

     • Al bondpad splash from overbonding force

     • Poorly optimized bonding parameters for bonding temperature/frequency/force during
       键合温度/频率/力的键合参数优化不佳

       thermosonic bonding

     • Oxidation of free air ball during ball bonding
       球键合过程中自由空气球的氧化

   • Crack at stitch/wedge heel

     • Delamination at/near the lead tip where stitch/wedge located
       针迹/楔形所在导程尖端处/附近分层

       • Adequate mold compound cure
         充分的模塑料固化

       • Mold lock techniques

     • Large CTE mismatch among package materials
       封装材料之间的 CTE 不匹配很大

     • Mismatch of material properties (e.g., Tg, CTE, elastic modulus) of component and
       组件的材料特性（例如 Tg、CTE、弹性模量）不匹配

       with customer circuit boards
       使用客户电路板

   • Wire neck severance

     • Die/mold compound delamination near/at the ball bond
       球键合附近/处的芯片/模塑化合物分层

       
       

2. Best Practices:

   
   

   • Inert environment around Cu wire

     • During wire storage

     • During free air ball formation
       在自由气球形成过程中

     • (Pd) Plated Cu wire （PD）电镀铜丝

   • Tighter controls/limits for wire pull/shear metrics
     更严格的拉线/剪切指标控制/限制

     • USL/UCL and LSL/LCL USL/UCL 和 LSL/LCL

     • Ball shear and wire pull near/over stitch
       球剪和拉丝近线/过线

     • Production monitor using unmolded parts
       使用未成型零件的生产监视器

     • Pull/shear after stress testing and careful decapsulation
       应力测试和仔细解封装后的拉力/剪切力

   • Capillary

     • More frequent replacement/maintenance
       更频繁的更换/维护

     • Designed specifically for Cu wire
       专为铜丝设计

   • Thermosonic bonding

     • Tighter parameters for frequency, temperature, force
       更严格的频率、温度、力参数

     • Reliability data collection at bond recipe corners of Force and Frequency
       力和频率的键合配方拐角处的可靠性数据收集

• Mold Compound Material Requirements
  模具复合材料要求

  • Sufficiently high pH (generally greater than 5)
    足够高的 pH 值（通常大于 5）

  • Cl extracted content (generally less than 15ppm)
    Cl 提取物含量（通常小于 15ppm）

• Safe Launch (i.e., initial production period) period for new Qualification and Changes
  新资格认证和变更的安全启动（即初始生产期）期限

  • Sample first lots for reliability test
    用于可靠性测试的第一批样品

• Bond Pad Construction including active circuits under pad if applicable
  焊盘结构，包括焊盘下的有源电路（如果适用）

  • Selecting the most sensitive bond pad known for analysis
    选择已知最灵敏的焊盘进行分析

• Ball Bond: IMC contact area after wire bonding
  Ball Bond： 引线键合后的 IMC 接触区域

  • Quantify smallest contact area below which there would be a bonding problem
    量化最小接触面积，低于该面积将会出现粘合问题

• Stitch/Wedge Bond: delamination response after TC

  • Quantify the largest amount of delamination change allowed
    量化允许的最大分层变化量

Revision History 修订历史记录

Rev #

Date of change 更改日期

Brief summary listing affected sections
列出受影响部分的简要摘要

- June 8, 2015

A July 1, 2016

Initial Release. 初始版本。

Complete Revision. Revised sections 3.1, 4, 4.1, 4.2, 4.3, 4.4, 5.1, 5.2, 5.3, 6.1, and 7, Tables 1, 3a, and 3b, Appendix 1, and Revision History. Added new sections 7.1, 7.2, and 7.3, and Table 2.
完成修订。修订了第 3.1、4、4.1、4.2、4.3、4.4、5.1、5.2、5.3、6.1 和 7 节、表 1、3a 和 3b、附录 1 和修订历史记录。